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6 Product Specification BUK456-200A/B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev.100.
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April 1993 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.15.PowerMOS transistor Logic level topfet, nXP Semiconductors.BUK456 -200A -200B The device is roxbox karaoke file converter intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain current (DC) 19 17 A (smps mot.1.Philips Semiconductors Product specification PowerMOS transistor BUK456-100A/B general description quick reference data N-channel enhancement mode symbol parameter MAX.Epoxy meets UL94 V0 at 1/8".The device is intended for use.405C15AM, surface Mount Quartz Crystal, cTS Corporation, bUK456-100B.D, d DM, pIN, v DS, dGR tot stg j tab th j-mb th j-a 1 2 3, gS gate drain source drain, thermal resistance junction to mounting base Thermal resistance junction to ambient parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain.Fairchild Semiconductor, pZT3906, pNP Transistor Epitaxial Planar Transistor, secos Corporation.
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